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SSM3K14T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
SSM3K14T
DC-DC Converter High Speed Switching Applications
* * * Small Package Low ON-resistance: Ron = 39 m (max) (@VGS = 10 V) : Ron = 57 m (max) (@VGS = 4.5 V) High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 20 4.0 8.0 0.7 1.25 150 -55~150 Unit V V A
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
W C C
JEDEC JEITA TOSHIBA
2-3S1A
Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature.
Weight: 10 mg (typ.)
Marking
3
Equivalent Circuit
3
KDK
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
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SSM3K14T
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| Test Condition VGS = 16 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -20 V VDS = 30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 2 A ID = 2 A, VGS = 10 V Drain-Source ON resistance RDS (ON) ID = 2 A, VGS = 4.5 V ID = 2 A, VGS = 4.0 V Total gate charge Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Qg Ciss Crss Coss tr ton tf toff VDD = 15 V, ID = 2 A VGS = 0~4 V, RG = 10 W (Note 3) (Note 3) (Note 3) (Note 3) Min 3/4 30 15 3/4 1.0 3.2 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 6.4 31 45 50 5.0 460 62 106 15 24 6 19 Max 1 3/4 3/4 1 2.5 3/4 39 57 67 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 ns nC pF pF pF mW Unit mA V mA V S
VDD ~ 24 V, ID = 4 A, VGS = 4 V VDS = 15 V, VGS = 0, f = 1 MHz VDS = 15 V, VGS = 0, f = 1 MHz VDS = 15 V, VGS = 0, f = 1 MHz
Note 3: Pulse test
Switching Time Test Circuit
(a) Test circuit
10 ms 4V 0 IN RG RL ID OUT VDD = 15 V RG = 10 W D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C
(b) VIN
4V 10%
90%
(c) VOUT
0 VDD
10% 90% tr ton toff tf
VDD
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 4 V or higher to turn on this product.
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SSM3K14T
ID - VDS
9 8 7 10 4.5 4 3.3 Common Source Ta = 25C 10000
ID - VGS
1000
(mA)
(A)
Ta = 100C 100 25C 10 -25C
6 5 4 3 2 VGS = 2.6 V 1 0 2.8
ID
Drain current
Drain current
3.0
ID
1 0.1
0.5
1
1.5
2
0.01 0
VDS = 5 V Common Source 1 2 3 4
Drain-Source voltage VDS
(V)
Gate-Source voltage
VGS
(V)
RDS (ON) -ID
100 Common Source Ta = 25C 80 160 200
RDS (ON) - VGS
Common Source ID = 2 A
Drain-Source on resistance RDS (ON) (mW)
60
VGS = 4 V 4.5 V
Drain-Source on resistance RDS (ON) (mW)
120
40 10 V 20
80
Ta = 100C 25
40 -25C
0 0
2
4
6
8
10
0 0
2
4
6
8
10
12
Drain current
ID
(A)
Gate-Source voltage
VGS
(V)
RDS (ON) - Ta
100 ID = 2 A Common Source 3 VDS = 5 V ID = 0.1 mA Common Source
Vth - Ta
(V)
VGS = 4 V
Drain-Source on resistance RDS (ON) (mW)
80
2.5
Gate threshold voltage Vth
2
60 4.5 V 40
1.5
10 V
1
20
0.5
0 -25
0
25
50
75
100
125
150
0 -25
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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SSM3K14T
|Yfs| - ID
100 VDS = 5 V 50 Common Source Ta = 25C 30 1000 500
C - VDS
Ciss
Capacitance (pF)
Forward transfer admittance |Yfs| (S)
300
10 5 3
100 50
Coss Crss
1 0.5 0.3
Common Source 30 VGS = 0 f = 1 MHz Ta = 25C 10 0.1 1
10
100
Drain-Source voltage VDS
(V)
0.1 0.01
0.1
1
10
Drain current
ID
(A)
Dynamic Input Characteristic
10 1000 500 300
t - ID
VDD = 15 V Common Source VGS = 0~4 V Rg = 10 W Ta = 25C
(V)
8
12 V VDD = 24 V
Gate-Source Voltage VGS
(ns)
toff 100 50 30 ton 10 5 3 tr tf
6
4
2
0 0
ID = 4 A Common Source Ta = 25C 2 4 6 8 10 12
Switching time Total Gate charge Qg (nC)
t
1 0.01
0.1
1
10
Drain current
ID
(A)
IDR - VDS
4 3.5 3 2.5 2 S 1.5 1 0.5 0 0 G Common Source VGS = 0 Ta = 25C D
Drain reverse current IDR
()
IDR
-0.2
-0.4
-0.6
-0.8
-1
Drain-Source voltage VDS
(V)
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SSM3K14T
Safe operating area
10 ID max (pulsed) ID max (continuous) 10 ms* 1 ms* 1.5
PD - Ta
t = 10 s Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2)
(W) PD Drain power dissipation
1.25
1
(A)
1 DC operation Ta = 25C 10 s*
0.75
DC
ID
0.5
Drain current
0.25
0.1 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1
0 0
25
50
75
100
125
150
Ambient temperature Ta (C)
VDSS max 10 100
0.01 0.1
Drain-Source voltage VDS
(V)
rth - tw
1000
rth Transient thermal impedance
(C /W)
100 10 Single pulse Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t, 2 Cu pad: 645 mm ) 1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
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SSM3K14T
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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